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JY14M 40V/200A N Channel Enhancement Mode Power MOSFET For Power Switching

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JY14M 40V/200A N Channel Enhancement Mode Power MOSFET For Power Switching

Brand Name : JUYI

Model Number : JY14M

Certification : ISO9001,CE

Place of Origin : China

MOQ : 50pcs ( sample available)

Price : USD0.5-USD1/PC

Payment Terms : T/T, , Western Union, Paypal

Supply Ability : 10000pcs per month

Delivery Time : depend on the order quantity /Negotiable

Packaging Details : Suite for export

Name : N Channel Enhancement Mode Power MOSFET

Model No. : JY14M

Type : N Channel

Drain-Source Voltage : 40V

Gate-Source Voltage : ±20V

Continuous Drain Current : 200A( Tc=25℃）

Pulsed Drain Current : 720A

Max Power DIssipation : 210W

Shap : Square

Color : Black

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Genearl Description:

The JY14M utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications.

Features:

● 40V/200A, RDS(ON) =2.5mΩ@VGS=10V

● Fast switching and reverse body recovery

● Fully characterized avalanche voltage and current

● Excellent package for good heat dissipation

Application:

● Switching application

● Hard switched and high frequency circuits

● Power Management for Inverter Systems

PIN Description:

JY14M 40V/200A N Channel Enhancement Mode Power MOSFET For Power Switching

Absolute Maximum Ratings(Tc=25℃ Unless Otherwise Noted):

Symbol Parameter Rating Unit
VDS Drain-Source Voltage 40 V
VGS Gate-Source Voltage ±20 V
ID Continuous Drain Current Tc=25℃ 200 A
Tc=100℃ 130
IDM Pulsed Drain Current 720 A
PD Maximum Power Dissipation 210 W
TJTSTG Operating Junction and Storage Temperature Range -55~+175 ℃
RΘJC Thermal Resistance-Junction to Case 0.65 ℃/W
RΘJA Thermal Resistance-Junction to Ambient 62 ℃/W

TO220-3 Package Outline:

JY14M 40V/200A N Channel Enhancement Mode Power MOSFET For Power Switching

SYMBOL MM INCH SYMBOL MM INCH
MIN NOM MAX MIN NOM MAX MIN NOM MAX MIN NOM MAX
A 4.40 4.57 4.70 0.173 0.180 0.185 Øp1 1.40 1.50 1.60 0.055 0.059 0.063
A1 1.27 1.30 1.33 0.050 0.051 0.052 e 2.54BSC 0.1BSC
A2 2.35 2.40 2.50 0.093 0.094 0.098 e1 5.08BSC 0.2BSC
b 0.77 - 0.90 0.030 - 0.035 H1 6.40 6.50 6.60 0.252 0.256 0.260
b2 1.23 - 1.36 0.048 - 0.054 L 12.75 - 13.17 0.502 - 0.519
C 0.48 0.50 0.52 0.019 0.020 0.021 L1 - - 3.95 - - 0.156
D 15.40 15.60 15.80 0.606 0.614 0.622 L2 250REF. 0.098REF.
D1 9.00 9.10 9.20 0.354 0.358 0.362 Øp 3.57 3.60 3.63 0.141 0.142 0.143
DEP 0.05 0.10 0.20 0.002 0.004 0.008 Q 2.73 2.80 2.87 0.107 0.110 0.113
E 9.70 9.90 10.10 0.382 0.389 0.398 Θ1 5° 7° 9° 5° 7° 9°
E1 - 8.70 - - 0.343 - Θ2 1° 3° 5° 1° 3° 5°
E2 9.80 10.00 10.20 0.386 0.394 0.401
More information please directly contact with us via email: ivanzhu@junqitrading.com

Product Tags:

40V enhancement mode power mosfet

      

200A enhancement mode power mosfet

      

Switching enhancement mode power mosfet

      
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